With Gallium Nitride (GaN) device technology for power electronics applications being\nramped up for volume production, an increasing amount of research is now focused on the\nperformance of GaN power devices in circuits. In this study, an enhancement mode GaN high\nelectron mobility transistor (HEMT) is switched in a clamped inductive switching configuration\nwith the aim of investigating the source of oscillatory effects observed. These arise as a result of\nthe increased switching speed capability of GaN devices compared to their silicon counterparts.\nThe study identifies the two major mechanisms (Miller capacitance charge and parasitic common\nsource inductance) that can lead to ringing behaviour during turn-off and considers the effect of\ntemperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to\nevaluate the contribution of different circuit components to oscillations. The study concludes with\ngood design techniques that can suppress the effects discussed.
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